Surface Diffusion Control Enables Tailored-Aspect-Ratio Nanostructures in Area-Selective Atomic Layer Deposition
نویسندگان
چکیده
Area-selective atomic layer deposition is a key technology for modern microelectronics as it eliminates alignment errors inherent to conventional approaches by enabling material only in specific areas. Typically, the selectivity originates from surface modifications of substrate that allow or block precursor adsorption. The control process currently remains major challenge no-growth areas lost quickly. Here, we show strongly manipulate diffusion. selective TiO2 on poly(methyl methacrylate) and SiO2 yields localized nanostructures with tailored aspect ratios. Controlling diffusion allows tuning such boosts growth rate at interface Kinetic Monte-Carlo calculations reveal species move high low Further, identify catalytic activity TiCl4 during formation carboxylic acid reaction mechanism responsible loss optimization leads higher selectivity. Our work enables precise area-selective nanoscale offers new strategies processes exploiting effects.
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2021
ISSN: ['1944-8244', '1944-8252']
DOI: https://doi.org/10.1021/acsami.0c22121